Silicon-Based Lens Support Structure For Diode Laser

ABSTRACT

An apparatus that includes a silicon-based support member and a silicon-based alignment structure is provided. The silicon-based alignment structure is received on a receiving surface of the support member. The alignment structure includes a first surface and a second surface parallel to and facing the first surface with a gap defined therebetween and configured to receive a light-emitting device inside the gap with the first surface and the second surface in contact with the light-emitting device such that, when a collimating rod lens is disposed on the alignment structure and over the gap, a longitudinal center line of the collimating rod lens is not aligned with a mid-point of the gap.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.12/546,287, filed Aug. 24, 2009, which claims the priority benefit ofU.S. Patent Application No. 61/189,971, filed Aug. 25, 2008. Theaforementioned applications are herein incorporated by reference intheir entirety.

TECHNICAL FIELD

The present disclosure generally relates to the field of collimation ofemitted light and, more particularly, to collimating light emitted fromdiode laser with a lens supported by a silicon-based lens supportstructure.

BACKGROUND

High-power direct diode lasers are gaining popularity in applicationssuch as heat treating and cutting in the automobile and materialprocessing industries. To heat or cut a material, the radiance of thediode laser has to be high enough to process the material effectively.Manufacturers of diode lasers have developed single-stack andmulti-stack diode lasers with an attached collimating lens to collimatelight emitted from the fast-axis of diode lasers. Fast-axis collimationis possible to within a few milli-radians of divergence of the laserbeam when a collimating lens is used. A collimating lens is typically arod lens or high numerical aperture cylindrical lens, and each diodelaser typically has a collimating lens attached to the fast-axis, whichis placed about a few tens or hundreds of microns in front of a facet ofthe diode laser.

To maintain a perfectly parallel beam of light, the collimating lens hasto be placed within a few tens or hundreds of microns from the diodelaser facet, with some variational dependence on the optical workingdistance of the collimating lens. This requires alignment of thecollimating lens with the diode laser. It is not easy to passively alignthe collimating lens to perfectly collimate the laser beam, and manyhours of alignment and special tools are usually required to assemble adiode laser package that includes one or more diode laser and therespective one or more collimating lens. Alternatively, alignment of thecollimating lens can be provided via active alignment, in whichalignment is provided on a real-time basis. However, active alignmentcan be particularly difficult for a high-power diode stack due to thelarge number of closely packaged diode lasers.

In the case of a multi-stack diode laser, each individual diode laserhas to be collimated and the respective collimating lens is attached tothe diode laser package structure. In aligning each collimating lens,the diode laser is running at the operating current and the collimatinglens is aligned with a tooling setup that allows for movement of thecollimating lens in a four- or five-axis controlled mechanical stage.After the alignment, the collimating lens is attached to the frame ofthe diode laser by, for example, UV-curing epoxy or a soldering process.However, failure of diode laser alignment is not uncommon. Typically,alignment of the diode laser fails due to weak bonding of the epoxy ordegradation of the epoxy joint caused by thermal cycles of the diodelaser.

There is, therefore, a need for a novel mechanical structure to alignthe collimating lens to provide optimal collimation and to hold thecollimating lens in place to withstand many thermal cycles of the diodelaser.

SUMMARY

In one aspect, an apparatus may be summarized as including a first diodelaser and a silicon-based support structure. The first diode laser isconfigured to emit a first laser beam when powered. The supportstructure includes a silicon-based support plate, a silicon-based firstfin structure, and a silicon-based second fin structure. The supportplate has a first primary surface and a second primary surface oppositethe first primary surface. The first fin structure has a first primarysurface, a second primary surface opposite the first primary surface,and a plurality of edges between the first and the second primarysurfaces including a first edge and a second edge opposite the firstedge. The first fin structure is physically coupled to the support platewith the first edge of the first fin structure attached to the firstprimary surface of the support plate. The second fin structure has afirst primary surface, a second primary surface opposite the firstprimary surface, and a plurality of edges between the first and thesecond primary surfaces including a first edge and a second edgeopposite the first edge. The second fin structure is physically coupledto the support plate with the first edge of the second fin structureattached to the first primary surface of the support plate. The firstdiode laser is physically coupled between the first and the second finstructures to emit the first laser beam in a direction away from thesupport plate.

The apparatus may further include a collimating device received betweenthe first and the second fin structures and positioned to collimate thefirst laser beam emitted from the first diode laser. In one embodiment,the collimating device may comprise a rod lens. In another embodiment,the collimating device may comprise a substantially cylindrical lenswith a high numerical aperture. In yet another embodiment, thecollimating device may comprise a rod lens having at least onesubstantially flat surface along a longitudinal axis of the rod lens. Instill another embodiment, the collimating device may comprise an opticallens having a numerical aperture value in the range of 0.20 to 0.80. Thecollimating device may be attached to at least one of the first and thesecond fin structures by UV-curing epoxy bonding. Alternatively, thecollimating device may be attached to at least one of the first and thesecond fin structures by soldering.

The support plate may include at least a first groove and a secondgroove on the first primary surface of the support plate. The first finstructure may be attached to the support plate with the first edge ofthe first fin structure received in the first groove of the supportplate. The second fin structure may be attached to the support platewith the first edge of the second fin structure received in the secondgroove of the support plate.

At least one of the support plate, the first fin structure, and thesecond fin structure may be made from a single-crystal silicon wafer. Inone embodiment, at least one of the first and the second fin structuresmay be made from a single-crystal silicon wafer that has a <100> siliconcrystal plane as a face plane, and at least one edge of at least one ofthe first and the second fin structures may be etched to form at leastone sloped surface having an angle of 54.7 degrees between the <100> anda <111> silicon crystal planes. In another embodiment, at least one ofthe first and the second fin structures may be made from asingle-crystal silicon wafer that has a <110> silicon crystal plane as aface plane, and at least one edge of at least one of the first and thesecond fin structures may be etched to form at least one sloped surfacehaving an angle of 35.3 degrees between the <110> and a <111> siliconcrystal planes. In one embodiment, at least a portion of the primarysurface of the first fin structure that the first light emitter isphysically coupled to may be metalized, and at least a portion of theprimary surface of the second fin structure that the first light emitteris physically coupled to may be metalized. In another embodiment, thesecond primary surface of the first fin structure may include a recessedportion, and the first light emitter may be physically coupled to therecessed portion of the second primary surface of the first finstructure.

The apparatus may further include a second diode laser configured toemit a second laser beam when powered and a silicon-based third finstructure. The silicon-based third fin structure has a first primarysurface, a second primary surface opposite the first primary surface,and a plurality of edges between the first and the second primarysurfaces including a first edge and a second edge opposite the firstedge. The third fin structure is physically coupled to the support platewith the first edge of the third fin structure attached to the firstprimary surface of the support plate. The second diode laser isphysically coupled between the second and the third fin structures toemit the second laser beam in a direction away from the support plate.

In another aspect, an apparatus may be summarized as including asilicon-based support plate, a silicon-based first fin structure, and asilicon-based second fin structure. The support plate has a firstprimary surface and a second primary surface opposite the first primarysurface. The first fin structure has a first primary surface, a secondprimary surface opposite the first primary surface, and a plurality ofedges between the first and the second primary surfaces including afirst edge and a second edge opposite the first edge. The first finstructure is physically coupled to the support plate with the first edgeof the first fin structure attached to the first primary surface of thesupport plate. The second fin structure has a first primary surface, asecond primary surface opposite the first primary surface, and aplurality of edges between the first and the second primary surfacesincluding a first edge and a second edge opposite the first edge. Thesecond fin structure is physically coupled to the support plate with thefirst edge of the second fin structure attached to the first primarysurface of the support plate. At least one of the primary surfaces ofthe first fin structure is substantially parallel to at least one of theprimary surfaces of the second fin structure when the first and thesecond fin structures are attached to the support plate. The first finstructure and the second fin structure are spaced apart by a distancethat is approximately a thickness of a first light emitter to allow thefirst light emitter to be physically coupled between the first and thesecond fin structures. At least a portion of at least one of the firstand the second primary surfaces of each of the first and the second finstructures is metalized.

The support plate may include at least a first groove and a secondgroove on the first primary surface of the support plate. The first finstructure may be attached to the support plate with the first edge ofthe first fin structure received in the first groove of the supportplate. The second fin structure may be attached to the support platewith the first edge of the second fin structure received in the secondgroove of the support plate.

At least one of the support plate, the first fin structure, and thesecond fin structure may be made from a single-crystal silicon wafer. Inone embodiment, at least one of the first and the second fin structuresmay be made from a single-crystal silicon wafer that has a <100> siliconcrystal plane as a face plane, and at least one edge of at least one ofthe first and the second fin structures may be etched to form at leastone sloped surface having an angle of 54.7 degrees between the <100> anda <111> silicon crystal planes. In another embodiment, at least one ofthe first and the second fin structures may be made from asingle-crystal silicon wafer that has a <110> silicon crystal plane as aface plane, and at least one edge of at least one of the first and thesecond fin structures may be etched to form at least one sloped surfacehaving an angle of 35.3 degrees between the <110> and a <111> siliconcrystal planes. In one embodiment, the support plate may be made from asingle-crystal silicon wafer and may have a <100> silicon crystal planeas the first primary surface, and at least one of the first and thesecond grooves may be a V-notch groove having two slopes each having anangle of 54.7 degrees measured from the first primary surface. Inanother embodiment, the support plate may be made from a single-crystalsilicon wafer and may have a <110> silicon crystal plane as the firstprimary surface, and at least one of the first and the second groovesmay be a V-notch groove having two slopes each having an angle of 35.3degrees measured from the first primary surface. In yet anotherembodiment, the support plate may be made from a single-crystal siliconwafer and may have a <100> silicon crystal plane as the first primarysurface, and at least one of the first and the second grooves may be arectangular groove.

In one embodiment, at least a portion of the primary surface of thefirst fin structure that the first light emitter is physically coupledto may be metalized, and at least a portion of the primary surface ofthe second fin structure that the first light emitter is physicallycoupled to may be metalized. In another embodiment, the second primarysurface of the first fin structure may include a recessed portion, andthe first light emitter may be physically coupled to the recessedportion of the second primary surface of the first fin structure. Atleast one of the first and the second fin structures may be attached tothe support plate by metal soldering, epoxy boding, eutectic bonding,anodic bonding, diffusion bonding, or a combination thereof.

The apparatus may also include the first light emitter that isphysically coupled between the first and the second fin structures. Inone embodiment, the first light emitter may comprise a light-emittingdiode. In another embodiment, the first light emitter may comprise adiode laser.

The apparatus may further include a collimating device received betweenthe first and the second fin structures and positioned to collimate thefirst beam of light emitted from the first light emitter. In oneembodiment, the collimating device may comprise a rod lens. In anotherembodiment, the collimating device may comprise a substantiallycylindrical lens with a high numerical aperture. In yet anotherembodiment, the collimating device may comprise a rod lens having atleast one substantially flat surface along a longitudinal axis of therod lens. In still another embodiment, the collimating device maycomprise an optical lens having a numerical aperture value in the rangeof 0.20 to 0.80. The collimating device may be attached to at least oneof the first and the second fin structures by UV-curing epoxy bonding.Alternatively, the collimating device may be attached to at least one ofthe first and the second fin structures by soldering.

The apparatus may further include a second light emitter configured toemit a second beam of light when powered and a silicon-based third finstructure. The third fin structure may have a first primary surface, asecond primary surface opposite the first primary surface, and aplurality of edges between the first and the second primary surfacesincluding a first edge and a second edge opposite the first edge. Thethird fin structure may be physically coupled to the support plate withthe first edge of the third fin structure attached to the first primarysurface of the support plate. The second light emitter may be physicallycoupled between the second and the third fin structures to emit thesecond beam of light in a direction away from the support plate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-3 are each a diagram showing a cross-sectional view of achemically etched groove in a single-crystal silicon wafer according toone non-limiting illustrated embodiment.

FIG. 4 is an assembly diagram of an apparatus according to onenon-limiting illustrated embodiment.

FIGS. 5 and 5A are each a side view of the apparatus shown in FIG. 4according to one non-limiting illustrated embodiment.

FIGS. 6 and 6A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 7 and 7A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 8 and 8A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 9 and 9A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 10 and 10A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 11 and 11A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 12 and 12A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 13 and 13A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIGS. 14 and 14A are each a side view of the apparatus shown in FIG. 4according to another non-limiting illustrated embodiment.

FIG. 15 is a diode laser package according to one non-limitingillustrated embodiment.

FIG. 16 a multi-emitter apparatus according to one non-limitingillustrated embodiment.

DETAILED DESCRIPTION

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various disclosedembodiments. However, one skilled in the relevant art will recognizethat embodiments may be practiced without one or more of these specificdetails, or with other methods, components, materials, etc. In otherinstances, well-known structures associated with diode lasers, solarcells, heat exchangers and heat pipes have not been shown or describedin detail to avoid unnecessarily obscuring descriptions of theembodiments.

Unless the context requires otherwise, throughout the specification andclaims which follow, the word “comprise” and variations thereof, suchas, “comprises” and “comprising” are to be construed in an open,inclusive sense that is as “including, but not limited to.”

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment. Thus, the appearances of the phrases “in one embodiment” or“in an embodiment” in various places throughout this specification arenot necessarily all referring to the same embodiment. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

The headings and Abstract of the Disclosure provided herein are forconvenience only and do not interpret the scope or meaning of theembodiments.

Currently, methods to etch a single-crystal silicon wafer to makeV-notch grooves or V-notch derived grooves are known. A single-crystalsilicon wafer can be etched to form a V-notch groove, V-notch derivedgroove, or a rectangular groove on a surface of the silicon wafer. ManyV-notch grooves are used, for example, to position or mount fiber opticsfor precision alignment purposes. Various V-notch groove angles,relative to a face plane of a single-crystal silicon wafer, can beachieved by etching in an anisotropic chemical process. All of thesilicon V-notch groove half angles, units in degrees, are listed inTable 1 below.

TABLE 1 Angles between Crystal Planes Angle between <100> <110> <010><001> <101> planes plane plane plane plane plane <100> plane 0.00 45.090.0 90.0 45.0 <011> plane 90.0 60.0 45.0 45.0 60.0 <111> plane 54.735.3 54.7 54.7 35.3 <211> plane 35.2 30.0 65.9 65.9 30.0 <311> plane25.2 31.4 72.4 72.4 31.4 <511> plane 15.8 35.2 78.9 78.9 35.2 <711>plane 11.4 37.6 81.9 81.9 37.6

Accordingly, V-notch grooves, V-notch derived grooves, and rectangulargrooves can be engineered on a support plate component to interlock withother components to support construction of a three-dimensionalstructure out of a face plane on the support plate where one or moregrooves are located.

Each of FIGS. 1-3 illustrates a cross-sectional view of a chemicallyetched groove in a single-crystal silicon wafer according to onenon-limiting illustrated embodiment.

FIG. 1 illustrates a cross-sectional view of a V-notch groove on a topsurface of a single-crystal silicon wafer etched by potassium hydroxide(KOH) or by other chemical process. The silicon wafer shown in FIG. 1has a <100> silicon crystal plane as a face plane. An angle of 54.7degrees results when an etched plane and the face plane of the siliconwafer when the etched plane coincides with a <111> silicon crystal planeof the silicon wafer. The single-crystal silicon wafer may also beetched to produce an edge in the form of a V-shaped wedge that issubstantially complementary to the V-notch groove etched on the topsurface of the silicon wafer. That is, such edge has a V-shaped wedgethat can fit complementarily in the V-notch groove.

FIG. 2 illustrates a cross-sectional view of a V-notch groove on a topsurface of a single-crystal silicon wafer etched by KOH or by otherchemical process. The silicon wafer shown in FIG. 2 has a <110> siliconcrystal plane as a face plane. An angle of 35.3 degrees results when anetched plane and the face plane of the silicon wafer when the etchedplane coincides with a <111> silicon crystal plane of the silicon wafer.The single-crystal silicon wafer may also be etched to produce an edgein the form of a V-shaped wedge that is substantially complementary tothe V-notch groove etched on the top surface of the silicon wafer. Thatis, such edge has a V-shaped wedge that can fit complementarily in theV-notch groove.

FIG. 3 illustrates a cross-sectional view of a rectangular groove on atop surface of a single-crystal silicon wafer etched by KOH or by otherchemical process. The silicon wafer shown in FIG. 3 has a <100> siliconcrystal plane as a face plane. An angle of 90.0 degrees results when anetched plane and the face plane of the silicon wafer when the etchedplane coincides with a <011> silicon crystal plane of the silicon wafer.The single-crystal silicon wafer may also be etched to produce an edgein the form of a rectangular wedge that is substantially complementaryto the rectangular groove etched on the top surface of the siliconwafer. That is, such edge has a rectangular wedge that can fitcomplementarily in the rectangular groove.

It should be understood that the various shapes of grooves asillustrated in FIGS. 1-3 are only some of the embodiments and should notbe construed as an exhaustive listing of all the embodiments within thescope of the present disclosure. Furthermore, although the illustratedembodiments are directed to a single-crystal silicon wafer, othernon-metal materials including multi-crystal silicon wafers and ceramicmaterials, such as beryllium oxide, aluminum oxide, or silicon carbidefor example, may be used as the material from which components of theembodiments disclosed herein can be fabricated. Grooves of other shapesachievable by etching or cutting a single-crystal silicon wafer, amulti-crystal silicon wafer, another silicon-based material, or aceramic material are also within the scope of the present disclosure.

FIG. 4 illustrates an apparatus 100 according to one non-limitingillustrated embodiment. The apparatus 100 includes a silicon-basedsupport plate 4, a silicon-based first fin structure 3A, and asilicon-based second fin structure 3B. In one embodiment, at least oneof the support plate 4, the first fin structure 3A and the second finstructure 3B is made from a single-crystal silicon wafer. In anotherembodiment, each of the support plate 4, the first fin structure 3A andthe second fin structure 3B is made from a respective one or the samesingle-crystal silicon wafer. The support plate 4 has a first primarysurface and a second primary surface opposite the first primary surface.Each of the first fin structure 3A and the second fin structure 3B has afirst primary surface, a second primary surface opposite the firstprimary surface, and a plurality of edges between the first and thesecond primary surfaces including a first edge and a second edgeopposite the first edge. The first fin structure 3A is physicallycoupled to the support plate 4 with the first edge of the first finstructure 3A attached to the first primary surface of the support plate4. The second fin structure 3B is physically coupled to the supportplate 4 with the first edge of the second fin structure 3B attached thefirst primary surface of the support plate 4. In one embodiment, thefirst and the second fin structures 3A, 3B are attached to the supportplate 4 in a manner such that at least one of the primary surfaces ofthe first fin structure 3A is substantially parallel to at least one ofthe primary surfaces of the second fin structure 3B. In anotherembodiment, at least one of the first and the second fin structures 3A,3B is attached to the support plate 4 by metal soldering, epoxy boding,eutectic bonding, anodic bonding, diffusion bonding, or a combinationthereof.

As shown in FIG. 4, the apparatus 100 may also include a light emitter1. In one embodiment, the light emitter 1 is a diode laser, such as alaser diode bar. In another embodiment, the light emitter 1 is alight-emitting diode. The light emitter 1 is physically coupled betweenthe first fin structure 3A and the second fin structure 3B. Morespecifically, the light emitter 1 is physically coupled between thefirst fin structure 3A and the second fin structure 3B such that thebeam of light, such as a laser beam in the case that the light emitter 1is a diode laser, is emitted in a direction away from the support plate4. When attached to the support plate 4, the first fin structure 3A andthe second fin structure 3B are spaced apart by a distance that isapproximately a thickness of the light emitter 1 to allow the lightemitter 1 to be physically coupled between the first and the second finstructures 3A, 3B. In one embodiment, the primary surface of the firstfin structure 3A that the light emitter 1 is physically coupled toincludes a recessed portion, and the light emitter 1 is physicallycoupled to the recessed portion of that primary surface of the first finstructure 3A. In another embodiment, the primary surface of the secondfin structure 3B that the light emitter 1 is physically coupled toincludes a recessed portion, and the light emitter 1 is physicallycoupled to the recessed portion of that primary surface of the first finstructure 3B.

In one embodiment, the surfaces of each of the first and the second finstructures 3A, 3B are metalized. In another embodiment, at least aportion of at least one of the first and the second primary surfaces ofeach of the first and the second fin structures 3A, 3B is metalized.That is, at least a portion of the surface of each of the fin structures3A, 3B that is in physical contact with the light emitter 1 is metalizedto provide electrical conductivity to allow electrical power to beprovided to the light emitter 1. Powering of the light emitter 1 is wellknown in the art. Thus, in the interest of brevity, detailed descriptionof powering of the light emitter 1 will not be provided herein and theassociated wiring and circuitry will not be shown in the figures.

In one embodiment, the first primary surface of the support plate 4includes indentation for the first and the second fin structures 3A, 3Bto attach to. For example, the support plate 4 may include at least afirst groove and a second groove on the first primary surface. The firstfin structure 3A may be attached to the support plate 4 with the firstedge of the first fin structure 3A received in the first groove of thesupport plate 4. Likewise, the second fin structure 3B may be attachedto the support plate 4 with the first edge of the second fin structure3B received in the second groove of the support plate 4. In oneembodiment, the support plate 4 is a single-crystal silicon wafer havinga <100> silicon crystal plane as the first primary surface, and at leastone of the first and the second grooves is a V-notch groove having twoslopes each having an angle of 54.7 degrees measured from the firstprimary surface as shown in FIG. 1. In another embodiment, the supportplate 4 is a single-crystal silicon wafer having a <110> silicon crystalplane as the first primary surface, and at least one of the first andthe second grooves is a V-notch groove having two slopes each having anangle of 35.3 degrees measured from the first primary surface as shownin FIG. 2. In yet another embodiment, the support plate 4 is asingle-crystal silicon wafer having a <100> silicon crystal plane as thefirst primary surface, and at least one of the first and the secondgrooves is a rectangular groove as shown in FIG. 3.

In one embodiment, at least one of the first and the second finstructures 3A, 3B is made from a single-crystal silicon wafer that has a<100> silicon crystal plane as a face plane, and at least one edge of atleast one of the first and the second fin structures 3A, 3B is etched toform at least one sloped surface having an angle of 54.7 degrees betweenthe <100> and a <111> silicon crystal planes. In another embodiment, atleast one of the first and the second fin structures 3A, 3B is made froma single-crystal silicon wafer that has a <110> silicon crystal plane asa face plane, and at least one edge of at least one of the first and thesecond fin structures 3A, 3B is etched to form at least one slopedsurface having an angle of 35.3 degrees between the <110> and a <111>silicon crystal planes.

As shown in FIG. 4, the apparatus 100 may further include a collimatingdevice 2. The collimating device is received, or otherwise attached,between the first and the second fin structures 3A, 3B and positioned tocollimate the beam of light emitted from the light emitter 1. In oneembodiment, the collimating device 2 is a rod lens. In anotherembodiment, the collimating device 2 is a substantially cylindrical lenswith a high numerical aperture. In yet another embodiment, thecollimating device 2 is a rod lens having at least one substantiallyflat surface along a longitudinal axis of the rod lens. In still anotherembodiment, the collimating device 2 is an optical lens having anumerical aperture value in the range of 0.20 to 0.80 for collimation ofthe beam of light emitted by the light emitter 1. In one embodiment, thecollimating device 2 is attached to at least one of the first and thesecond fin structures 3A, 3B by UV-curing epoxy bonding. Alternatively,the collimating device 2 is attached to at least one of the first andthe second fin structures 3A, 3B by soldering.

FIG. 5 illustrates a side view of the apparatus 100 according to onenon-limiting illustrated embodiment. The light emitter 1 is physicallycoupled between the first fin structure 3A and the second fin structure3B, which are attached to the support plate 4. The first fin structure3A has primary surfaces 301A, 302A and a second edge having slopedsurfaces 303A, 304A. The second fin structure 3B has primary surfaces301B, 302B and a second edge having sloped surfaces 303B, 304B. In oneembodiment, the first and the second fin structures 3A, 3B are each madefrom a single-crystal silicon wafer and have symmetric shapes. At leasta portion of some or all of the surfaces 301A, 302A, 303A, 304A of thefirst fin structure 3A and the surfaces 301B, 302B, 303B, 304B of thesecond fin structure 3B are metalized.

A collimating device 2 is attached to the sloped surface 304A of thefirst fin structure 3A and the sloped surface 303B of the second finstructure 3B. In one embodiment, the light emitter 1 is a laser diodebar that emits a laser beam 5. The laser beam 5 emits from one side oflight emitter 1 as shown in FIG. 5 and propagates through thecollimating device 2. With the collimating device 2 positioned anddistanced appropriately from the light emitter 1, the laser beam 5 isproperly collimated by the collimating device 2 in a direction away fromthe support plate 4. Without proper location control of the collimatingdevice 2, the laser beam 5 cannot be properly collimated. It istherefore important to fabricate and assemble the apparatus 100 withtight precision to maintain good collimation or to fix the divergence ofthe laser beam 5.

FIG. 5A illustrates an enlarged section A of FIG. 5. As shown in FIG.5A, the collimating device 2 rests on the second edges of the first andthe second fin structures 3A, 3B. The second edges of the first and thesecond fin structures 3A, 3B are chemically etched to produce an angleθ1 as measured from one of primary surfaces and an angle θ2 as measuredfrom the other primary surface, where θ1 and θ2 may or may not be equaland each may be 54.7 or 35.3 degrees. The angle of 54.7 degrees can beachieved by using a single-crystal silicon wafer with a face plane <100>and an edge plane of <110>. The angle of 35.3 degrees can be achieved byusing a single-crystal silicon wafer with a face plane <110> and an edgeplane of <100>. The sloping of the sloped surfaces of the first and thesecond fin structures 3A, 3B is designed so that the sloped surfaces canhold the collimating device 2 in proper position for maintaining anoptical working distance so that the collimating device 2 collimates thelaser beam 5.

FIG. 6 illustrates an apparatus 200 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 7A and the second fin structure 7B,which are attached to the support plate 4. The first fin structure 7Ahas primary surfaces 701A, 702A and a second edge having sloped surfaces703A, 704A. The second fin structure 7B has primary surfaces 701B, 702Band a second edge having sloped surfaces 703B, 704B. In one embodiment,the first and the second fin structures 7A, 7B are each made from asingle-crystal silicon wafer but have asymmetric shapes. At least aportion of some or all of the surfaces 701A, 702A, 703A, 704A of thefirst fin structure 7A and the surfaces 701B, 702B, 703B, 704B of thesecond fin structure 7B are metalized.

A collimating device 6 is attached to the sloped surface 704A of thefirst fin structure 7A and the sloped surface 703B of the second finstructure 7B. In one embodiment, the light emitter 1 is a laser diodebar that emits a laser beam 5. The laser beam 5 emits from one side oflight emitter 1 as shown in FIG. 6 and propagates through thecollimating device 6. With the collimating device 6 positioned anddistanced appropriately from the light emitter 1, the laser beam 5 isproperly collimated by the collimating device 6 in a direction away fromthe support plate 4. Since the laser beam 5 emits from one side of lightemitter 1, the first fin structure 7A is constructed to lift thecollimating device 6 to catch the laser beam 5 at the center of thecollimating device 6 as shown in FIG. 6. The centering of the laser beam5 to collimating device 6 is done by fabricating asymmetric pieces offin structures for the first and the second fin structures 7A, 7B. Theslopes holding the collimating device 6 in the first and the second finstructures 7A, 7B are designed to hold the collimating device 6 inposition to maintain an optical working distance of the collimatingdevice 6 to collimate the laser beam 5. Without proper location controlof the collimating device 6, the laser beam 5 cannot be properlycollimated. It is therefore important to fabricate and assemble theapparatus 200 with tight precision to maintain good collimation or tofix the divergence of the laser beam 5.

FIG. 6A illustrates an enlarged section A of FIG. 6. As shown in FIG.6A, the collimating device 6 rests on the second edges of the first andthe second fin structures 7A, 7B. The second edges of the first and thesecond fin structures 7A, 7B are chemically etched to produce an angleθ3 as measured from one of primary surfaces and an angle θ4 as measuredfrom the other primary surface, where θ3 and θ4 may or may not be equaland each may be 54.7 or 35.3 degrees. The angle of 54.7 degrees can beachieved by using a single-crystal silicon wafer with a face plane <100>and an edge plane of <110>. The angle of 35.3 degrees can be achieved byusing a single-crystal silicon wafer with a face plane <110> and an edgeplane of <100>. The sloping of the sloped surfaces of the first and thesecond fin structures 7A, 7B is designed so that the sloped surfaces canhold the collimating device 6 in proper position for maintaining anoptical working distance so that the collimating device 6 collimates thelaser beam 5.

FIG. 7 illustrates an apparatus 300 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 10A and the second fin structure 10B,which are attached to the support plate 4. The first fin structure 10Ahas primary surfaces 1001A, 1002A and a second edge having slopedsurfaces 1003A, 1005A, 1006A, 1008A. The second fin structure 10B hasprimary surfaces 1001B, 1002B and a second edge having sloped surfaces1003B, 1005B, 1006B, 1008B. In one embodiment, the first and the secondfin structures 10A, 10B are each made from a single-crystal siliconwafer and have symmetric shapes. At least a portion of some or all ofthe surfaces 1001A, 1002A, 1003A, 1004A, 1005A, 1006A, 1007A, 1008A ofthe first fin structure 10A and the surfaces 1001B, 1002B, 1003B, 1004B,1005B, 1006B, 1007B, 1008B of the second fin structure 10B aremetalized.

A collimating device 9 is attached to the vertical surface 1007A of thefirst fin structure 10A and the sloped surface 1003B and verticalsurface 1004B of the second fin structure 10B. In one embodiment, thelight emitter 1 is a laser diode bar that emits a laser beam 5. Thelaser beam 5 emits from one side of light emitter 1 as shown in FIG. 7and propagates through the collimating device 9. With the collimatingdevice 9 positioned and distanced appropriately from the light emitter1, the laser beam 5 is properly collimated by the collimating device 9in a direction away from the support plate 4. Since the laser beam 5emits from one side of light emitter 1, the first fin structure 10A isconstructed to lift the collimating device 9 to catch the laser beam 5at the center of the collimating device 9 as shown in FIG. 7. Thecentering of the laser beam 5 to the collimating device 9 is done byfabricating symmetric pieces of fin structures for the first and thesecond fin structures 10A, 10B. The slopes holding the collimatingdevice 9 in the first and the second fin structures 10A, 10B aredesigned to hold the collimating device 9 in position to maintain anoptical working distance of the collimating device 9 to collimate thelaser beam 5. Without proper location control of the collimating device9, the laser beam 5 cannot be properly collimated. It is thereforeimportant to fabricate and assemble the apparatus 300 with tightprecision to maintain good collimation or to fix the divergence of thelaser beam 5.

FIG. 7A illustrates an enlarged section A of FIG. 7. As shown in FIG.7A, the collimating device 9 rests on the second edges of the first andthe second fin structures 10A, 10B. The second edges of the first andthe second fin structures 10A, 10B are chemically etched to produceangles θ5, θ6 as measured from one of primary surfaces and angles θ7, θ8as measured from the other primary surface, where θ5, θ6, θ7, θ8 may ormay not be equal and each may be 54.7 or 35.3 degrees. The angle of 54.7degrees can be achieved by using a single-crystal silicon wafer with aface plane <100> and an edge plane of <110>. The angle of 35.3 degreescan be achieved by using a single-crystal silicon wafer with a faceplane <110> and an edge plane of <100>. The sloping of the slopedsurfaces of the first and the second fin structures 10A, 10B is designedso that the sloped surfaces can hold the collimating device 9 in properposition for maintaining an optical working distance so that thecollimating device 9 collimates the laser beam 5.

FIG. 8 illustrates an apparatus 400 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 13A and the second fin structure 13B,which are attached to the support plate 4. The first fin structure 13Ahas primary surfaces 1301A, 1302A and a second edge having slopedsurfaces 1303A, 1305A, 1306A, 1308A. The second fin structure 13B hasprimary surfaces 1301B, 1302B and a second edge having sloped surfaces1303B, 1305B, 1306B, 1308B. In one embodiment, the first and the secondfin structures 13A, 13B are each made from a single-crystal siliconwafer and have symmetric shapes. At least a portion of some or all ofthe surfaces 1301A, 1302A, 1303A, 1304A, 1305A, 1306A, 1307A, 1308A ofthe first fin structure 13A and the surfaces 1301B, 1302B, 1303B, 1304B,1305B, 1306B, 1307B, 1308B of the second fin structure 13B aremetalized.

A collimating device 11 is attached to the sloped surface 1303B andvertical surface 1304B of the second fin structure 13B. In oneembodiment, the light emitter 1 is a laser diode bar that emits a laserbeam 5. The laser beam 5 emits from one side of light emitter 1 as shownin FIG. 8 and propagates through the collimating device 11. With thecollimating device 11 positioned and distanced appropriately from thelight emitter 1, the laser beam 5 is properly collimated by thecollimating device 11 in a direction away from the support plate 4.Since the laser beam 5 emits from one side of the light emitter 1, thefirst and the second fin structures 13A, 13B are constructed to catchthe laser beam 5 at the center of the collimating device 11 as shown inFIG. 8. In order to maintain the proper position of the collimatingdevice 11, a shim 14 and spacer 15 are used to hold the collimatingdevice 11 in place. The centering of the laser beam 5 to the collimatingdevice 11 is done by fabricating symmetric pieces of fin structures forthe first and the second fin structures 13A, 13B, with the use of theshim 14 and the spacer 15. The slopes holding the collimating device 11in the first and the second fin structures 13A, 13B are designed to holdthe collimating device 11 in position, with the aid of the shim 14 andthe spacer 15, to maintain an optical working distance of thecollimating device 11 to collimate the laser beam 5. Without properlocation control of the collimating device 11, the laser beam 5 cannotbe properly collimated. It is therefore important to fabricate andassemble the apparatus 400 with tight precision to maintain goodcollimation or to fix the divergence of the laser beam 5.

FIG. 8A illustrates an enlarged section A of FIG. 8. As shown in FIG.8A, the collimating device 11 rests on the second edges of the first andthe second fin structures 13A, 13B. The second edges of the first andthe second fin structures 13A, 13B are chemically etched to produceangles θ9, θ10 as measured from one of primary surfaces and angles θ11,θ12 as measured from the other primary surface, where θ9, θ10, θ11, θ12may or may not be equal and each may be 54.7 or 35.3 degrees. The angleof 54.7 degrees can be achieved by using a single-crystal silicon waferwith a face plane <100> and an edge plane of <110>. The angle of 35.3degrees can be achieved by using a single-crystal silicon wafer with aface plane <110> and an edge plane of <100>. The sloping of the slopedsurfaces of the first and the second fin structures 13A, 13B is designedso that the sloped surfaces can hold the collimating device 11 in properposition for maintaining an optical working distance so that thecollimating device 11 collimates the laser beam 5.

FIG. 9 illustrates an apparatus 500 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 17A and the second fin structure 17B,which are attached to the support plate 4. The first fin structure 17Ahas primary surfaces 1701A, 1702A and a second edge having slopedsurfaces 1703A, 1705A, 1706A, 1708A. The second fin structure 17B hasprimary surfaces 1701B, 1702B and a second edge having sloped surfaces1703B, 1705B, 1706B, 1708B. In one embodiment, the first and the secondfin structures 17A, 17B are each made from a single-crystal siliconwafer and have symmetric shapes. At least a portion of some or all ofthe surfaces 1701A, 1702A, 1703A, 1704A, 1705A, 1706A, 1707A, 1708A ofthe first fin structure 17A and the surfaces 1701B, 1702B, 1703B, 1704B,1705B, 1706B, 1707B, 1708B of the second fin structure 17B aremetalized.

A collimating device 16 is attached to the sloped surface 1703B of thesecond fin structure 17B. In one embodiment, the light emitter 1 is alaser diode bar that emits a laser beam 5. The laser beam 5 emits fromone side of light emitter 1 as shown in FIG. 9 and propagates throughthe collimating device 16. With the collimating device 16 positioned anddistanced appropriately from the light emitter 1, the laser beam 5 isproperly collimated by the collimating device 16 in a direction awayfrom the support plate 4. Since the laser beam 5 emits from one side ofthe light emitter 1, the first and the second fin structures 17A, 17Bare constructed to catch the laser beam 5 at the center of thecollimating device 16 as shown in FIG. 9. In order to maintain theproper position of the collimating device 16, a wedge shim 18 is used tohold the collimating device 16 in place. The centering of the laser beam5 to the collimating device 16 is done by fabricating symmetric piecesof fin structures for the first and the second fin structures 17A, 17B,with the use of the wedge shim 18. The slopes holding the collimatingdevice 16 in the first and the second fin structures 17A, 17B aredesigned to hold the collimating device 16 in position, with the aid ofthe wedge shim 17, to maintain an optical working distance of thecollimating device 16 to collimate the laser beam 5. Without properlocation control of the collimating device 16, the laser beam 5 cannotbe properly collimated. It is therefore important to fabricate andassemble the apparatus 500 with tight precision to maintain goodcollimation or to fix the divergence of the laser beam 5.

FIG. 9A illustrates an enlarged section A of FIG. 9. As shown in FIG.9A, the collimating device 16 rests on the second edges of the first andthe second fin structures 17A, 17B. The second edges of the first andthe second fin structures 17A, 17B are chemically etched to produceangles θ13, θ14 as measured from one of primary surfaces and angles θ15,θ16 as measured from the other primary surface, where θ13, θ14, θ15, θ16may or may not be equal and each may be 54.7 or 35.3 degrees. The angleof 54.7 degrees can be achieved by using a single-crystal silicon waferwith a face plane <100> and an edge plane of <110>. The angle of 35.3degrees can be achieved by using a single-crystal silicon wafer with aface plane <110> and an edge plane of <100>. The sloping of the slopedsurfaces of the first and the second fin structures 17A, 17B is designedso that the sloped surfaces can hold the collimating device 16 in properposition for maintaining an optical working distance so that thecollimating device 16 collimates the laser beam 5.

FIG. 10 illustrates an apparatus 600 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 20A and the second fin structure 20B,which are attached to the support plate 4. The first fin structure 20Ahas primary surfaces 2001A, 2002A and a second edge having slopedsurfaces 2003A, 2005A, 2006A. The second fin structure 20B has primarysurfaces 2001B, 2002B and a second edge having sloped surfaces 2003B,2005B, 2006B. In one embodiment, the first and the second fin structures20A, 20B are each made from a single-crystal silicon wafer and havesymmetric shapes. At least a portion of some or all of the surfaces2001A, 2002A, 2003A, 2004A, 2005A, 2006A, 2007A, 2008A of the first finstructure 20A and the surfaces 2001B, 2002B, 2003B, 2004B, 2005B, 2006B,2007B, 2008B of the second fin structure 20B are metalized.

A collimating device 19 is attached to the vertical surface 2007A of thefirst fin structure 20A and the vertical surface 2004B of the second finstructure 20B. In one embodiment, the light emitter 1 is a laser diodebar that emits a laser beam 5. The laser beam 5 emits from one side oflight emitter 1 as shown in FIG. 10 and propagates through thecollimating device 19. With the collimating device 19 positioned anddistanced appropriately from the light emitter 1, the laser beam 5 isproperly collimated by the collimating device 19 in a direction awayfrom the support plate 4. Since the laser beam 5 emits from one side ofthe light emitter 1, the first and the second fin structures 20A, 20Bare constructed to catch the laser beam 5 at the center of thecollimating device 19 as shown in FIG. 10. The centering of the laserbeam 5 to the collimating device 19 is done by fabricating symmetricpieces of fin structures for the first and the second fin structures20A, 20B. The vertical walls and edges holding the collimating device 19in the first and the second fin structures 20A, 20B are designed to holdthe collimating device 19 in a proper position for maintaining anoptical working distance of the collimating device 19 to collimate thelaser beam 5. Without proper location control of the collimating device19, the laser beam 5 cannot be properly collimated. It is thereforeimportant to fabricate and assemble the apparatus 600 with tightprecision to maintain good collimation or to fix the divergence of thelaser beam 5.

FIG. 10A illustrates an enlarged section A of FIG. 10. As shown in FIG.10A, the collimating device 19 rests on the second edges of the firstand the second fin structures 20A, 20B. The second edges of the firstand the second fin structures 20A, 20B are chemically etched to produceangles θ17, θ18 as measured from one of primary surfaces and angles θ19,θ20 as measured from the other primary surface, where θ17, θ18, θ19 mayor may not be equal and each may be 54.7 or 35.3 degrees. The angle θ20is a 90-degree angle as measured from the same primary surface the angleθ19 is measured from. The angle of 54.7 degrees can be achieved by usinga single-crystal silicon wafer with a face plane <100> and an edge planeof <110>. The angle of 35.3 degrees can be achieved by using asingle-crystal silicon wafer with a face plane <110> and an edge planeof <100>. The sloping of the sloped surfaces of the first and the secondfin structures 20A, 20B is designed so that the sloped surfaces can holdthe collimating device 19 in proper position for maintaining an opticalworking distance so that the collimating device 19 collimates the laserbeam 5.

FIG. 11 illustrates an apparatus 700 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 23A and the second fin structure 23B,which are attached to the support plate 4. The first fin structure 23Ahas primary surfaces 2301A, 2302A and a second edge having slopedsurfaces 2303A, 2305A, 2306A, 2308A. The second fin structure 23B hasprimary surfaces 2301B, 2302B and a second edge having sloped surfaces2303B, 2305B, 2306B, 2308B. In one embodiment, the first and the secondfin structures 23A, 23B are each made from a single-crystal siliconwafer and have symmetric shapes. At least a portion of some or all ofthe surfaces 2301A, 2302A, 2303A, 2304A, 2305A, 2306A, 2307A, 2308A ofthe first fin structure 23A and the surfaces 2301B, 2302B, 2303B, 2304B,2305B, 2306B, 2307B, 2308B of the second fin structure 23B aremetalized.

A collimating device 23 is attached to the sloped surfaces 2307A and2308A of the first fin structure 23A and the vertical surface 2304B ofthe second fin structure 23B. In one embodiment, the light emitter 1 isa laser diode bar that emits a laser beam 5. The laser beam 5 emits fromone side of light emitter 1 as shown in FIG. 11 and propagates throughthe collimating device 23. With the collimating device 23 positioned anddistanced appropriately from the light emitter 1, the laser beam 5 isproperly collimated by the collimating device 23 in a direction awayfrom the support plate 4. Since the laser beam 5 emits from one side ofthe light emitter 1, the first and the second fin structures 23A, 23Bare constructed to catch the laser beam 5 at the center of thecollimating device 23 as shown in FIG. 11. The centering of the laserbeam 5 to the collimating device 23 is done by fabricating symmetricpieces of fin structures for the first and the second fin structures23A, 23B. The slope and vertical wall holding the collimating device 23in the first and the second fin structures 23A, 23B are designed to holdthe collimating device 23 in a proper position for maintaining anoptical working distance of the collimating device 23 to collimate thelaser beam 5. Without proper location control of the collimating device23, the laser beam 5 cannot be properly collimated. It is thereforeimportant to fabricate and assemble the apparatus 700 with tightprecision to maintain good collimation or to fix the divergence of thelaser beam 5.

FIG. 11A illustrates an enlarged section A of FIG. 11. As shown in FIG.11A, the collimating device 23 rests on the second edges of the firstand the second fin structures 23A, 23B. The second edges of the firstand the second fin structures 23A, 23B are chemically etched to produceangles θ21, θ22 as measured from one of primary surfaces and angles θ23,θ24 as measured from the other primary surface, where θ21, θ22, θ23, θ24may or may not be equal and each may be 54.7 or 35.3 degrees. The angleof 54.7 degrees can be achieved by using a single-crystal silicon waferwith a face plane <100> and an edge plane of <110>. The angle of 35.3degrees can be achieved by using a single-crystal silicon wafer with aface plane <110> and an edge plane of <100>. The sloping of the slopedsurfaces of the first and the second fin structures 23A, 23B is designedso that the sloped surfaces can hold the collimating device 23 in properposition for maintaining an optical working distance so that thecollimating device 23 collimates the laser beam 5.

FIG. 12 illustrates an apparatus 800 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 25A and the second fin structure 25B,which are attached to the support plate 4. The first fin structure 25Ahas primary surfaces 2501A, 2502A and a second edge having slopedsurfaces 2503A, 2505A, 2506A, 2508A. The second fin structure 25B hasprimary surfaces 2501B, 2502B and a second edge having sloped surfaces2503B, 2505B, 2506B, 2508B. In one embodiment, the first and the secondfin structures 25A, 25B are each made from a single-crystal siliconwafer and have symmetric shapes. At least a portion of some or all ofthe surfaces 2501A, 2502A, 2503A, 2504A, 2505A, 2506A, 2507A, 2508A ofthe first fin structure 25A and the surfaces 2501B, 2502B, 2503B, 2504B,2505B, 2506B, 2507B, 2508B of the second fin structure 25B aremetalized.

A collimating device 24 is attached to the vertical primary surface2502A of the first fin structure 25A and the sloped surface 2503B of thesecond fin structure 25B. In one embodiment, the light emitter 1 is alaser diode bar that emits a laser beam 5. The laser beam 5 emits fromone side of light emitter 1 as shown in FIG. 12 and propagates throughthe collimating device 24. With the collimating device 24 positioned anddistanced appropriately from the light emitter 1, the laser beam 5 isproperly collimated by the collimating device 24 in a direction awayfrom the support plate 4. Since the laser beam 5 emits from one side ofthe light emitter 1, the first and the second fin structures 25A, 25Bare constructed to catch the laser beam 5 at the center of thecollimating device 24 as shown in FIG. 12. The centering of the laserbeam 5 to the collimating device 24 is done by fabricating symmetricpieces of fin structures for the first and the second fin structures25A, 25B. The slope and vertical wall holding the collimating device 24in the first and the second fin structures 25A, 25B are designed to holdthe collimating device 24 in a proper position for maintaining anoptical working distance of the collimating device 24 to collimate thelaser beam 5. Without proper location control of the collimating device24, the laser beam 5 cannot be properly collimated. It is thereforeimportant to fabricate and assemble the apparatus 800 with tightprecision to maintain good collimation or to fix the divergence of thelaser beam 5.

FIG. 12A illustrates an enlarged section A of FIG. 12. As shown in FIG.12A, the collimating device 24 rests on the second edges of the firstand the second fin structures 25A, 25B. The second edges of the firstand the second fin structures 25A, 25B are chemically etched to produceangles θ25, θ26 as measured from one of primary surfaces and angles θ27,θ28 as measured from the other primary surface, where θ25, θ26, θ27, θ28may or may not be equal and each may be 54.7 or 35.3 degrees. The angleof 54.7 degrees can be achieved by using a single-crystal silicon waferwith a face plane <100> and an edge plane of <110>. The angle of 35.3degrees can be achieved by using a single-crystal silicon wafer with aface plane <110> and an edge plane of <100>. The sloping of the slopedsurfaces of the first and the second fin structures 25A, 25B is designedso that the sloped surfaces can hold the collimating device 24 in properposition for maintaining an optical working distance so that thecollimating device 24 collimates the laser beam 5.

FIG. 13 illustrates an apparatus 900 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 27A and the second fin structure 27B,which are attached to the support plate 4. The first fin structure 27Ahas primary surfaces 2701A, 2702A and a second edge having slopedsurfaces 2703A, 2705A, 2706A. The second fin structure 27B has primarysurfaces 2701B, 2702B and a second edge having sloped surfaces 2703B,2705B, 2706B. In one embodiment, the first and the second fin structures27A, 27B are each made from a single-crystal silicon wafer and havesymmetric shapes. At least a portion of some or all of the surfaces2701A, 2702A, 2703A, 2704A, 2705A, 2706A of the first fin structure 27Aand the surfaces 2701B, 2702B, 2703B, 2704B, 2705B, 2706B of the secondfin structure 27B are metalized.

A collimating device 26 is attached to the vertical primary surface2702A of the first fin structure 27A and the sloped surface 2703B andvertical surface 2704B of the second fin structure 27B. In oneembodiment, the light emitter 1 is a laser diode bar that emits a laserbeam 5. The laser beam 5 emits from one side of light emitter 1 as shownin FIG. 13 and propagates through the collimating device 26. As shown inFIGS. 13 and 13A, the collimating device 26 is a rod lens having onesubstantially flat surface along a longitudinal axis of the rod lens sothat, by design, the collimating device 26 can fit between the first andthe second fin structures 27A, 27B and be positioned to collimate thelaser beam 5. With the collimating device 26 positioned and distancedappropriately from the light emitter 1, the laser beam 5 is properlycollimated by the collimating device 26 in a direction away from thesupport plate 4. Since the laser beam 5 emits from one side of the lightemitter 1, the first and the second fin structures 27A, 27B areconstructed to catch the laser beam 5 at the center of the collimatingdevice 26 as shown in FIG. 13. The centering of the laser beam 5 to thecollimating device 26 is done by fabricating symmetric pieces of finstructures for the first and the second fin structures 27A, 27B. Theslope and vertical wall holding the collimating device 26 in the firstand the second fin structures 27A, 27B are designed to hold thecollimating device 26 in a proper position for maintaining an opticalworking distance of the collimating device 26 to collimate the laserbeam 5. Without proper location control of the collimating device 26,the laser beam 5 cannot be properly collimated. It is thereforeimportant to fabricate and assemble the apparatus 900 with tightprecision to maintain good collimation or to fix the divergence of thelaser beam 5.

FIG. 13A illustrates an enlarged section A of FIG. 13. As shown in FIG.13A, the collimating device 26 rests on the second edges of the firstand the second fin structures 27A, 27B. The second edges of the firstand the second fin structures 27A, 27B are chemically etched to produceangles θ29, θ30 as measured from one of primary surfaces and an angleθ31 as measured from the other primary surface, where θ29, θ30, θ31 mayor may not be equal and each may be 54.7 or 35.3 degrees. The angle of54.7 degrees can be achieved by using a single-crystal silicon waferwith a face plane <100> and an edge plane of <110>. The angle of 35.3degrees can be achieved by using a single-crystal silicon wafer with aface plane <110> and an edge plane of <100>. The sloping of the slopedsurfaces of the first and the second fin structures 27A, 27B is designedso that the sloped surfaces can hold the collimating device 26 in properposition for maintaining an optical working distance so that thecollimating device 26 collimates the laser beam 5.

FIG. 14 illustrates an apparatus 1000 according to one non-limitingillustrated embodiment. The light emitter 1 is physically coupledbetween the first fin structure 29A and the second fin structure 29B,which are attached to the support plate 4. The first fin structure 29Ahas primary surfaces 2901A, 2902A and a second edge having slopedsurfaces 2903A, 2905A, 2906A. The second fin structure 29B has primarysurfaces 2901B, 2902B and a second edge having sloped surfaces 2903B,2905B, 2906B. In one embodiment, the first and the second fin structures29A, 29B are each made from a single-crystal silicon wafer and havesymmetric shapes. At least a portion of some or all of the surfaces2901A, 2902A, 2903A, 2904A, 2905A, 2906A of the first fin structure 29Aand the surfaces 2901B, 2902B, 2903B, 2904B, 2905B, 2906B of the secondfin structure 29B are metalized.

A collimating device 28 is attached to the vertical primary surface2902A of the first fin structure 29A and the sloped surface 2903B andvertical surface 2904B of the second fin structure 29B. In oneembodiment, the light emitter 1 is a laser diode bar that emits a laserbeam 5. The laser beam 5 emits from one side of light emitter 1 as shownin FIG. 14 and propagates through the collimating device 28. As shown inFIGS. 14 and 14A, the collimating device 28 is a rod lens having twosubstantially flat surfaces along a longitudinal axis of the rod lens sothat, by design, the collimating device 28 can fit between the first andthe second fin structures 29A, 29B and be positioned to collimate thelaser beam 5. With the collimating device 28 positioned and distancedappropriately from the light emitter 1, the laser beam 5 is properlycollimated by the collimating device 28 in a direction away from thesupport plate 4. Since the laser beam 5 emits from one side of the lightemitter 1, the first and the second fin structures 29A, 29B areconstructed to catch the laser beam 5 at the center of the collimatingdevice 28 as shown in FIG. 14. The centering of the laser beam 5 to thecollimating device 28 is done by fabricating symmetric pieces of finstructures for the first and the second fin structures 29A, 29B. Theslope and vertical wall holding the collimating device 28 in the firstand the second fin structures 29A, 29B are designed to hold thecollimating device 28 in a proper position for maintaining an opticalworking distance of the collimating device 28 to collimate the laserbeam 5. Without proper location control of the collimating device 28,the laser beam 5 cannot be properly collimated. It is thereforeimportant to fabricate and assemble the apparatus 1000 with tightprecision to maintain good collimation or to fix the divergence of thelaser beam 5.

FIG. 14A illustrates an enlarged section A of FIG. 14. As shown in FIG.14A, the collimating device 28 rests on the second edges of the firstand the second fin structures 29A, 29B. The second edges of the firstand the second fin structures 29A, 29B are chemically etched to produceangles θ32, θ33 as measured from one of primary surfaces and an angleθ34 as measured from the other primary surface, where θ32, θ33, θ34 mayor may not be equal and each may be 54.7 or 35.3 degrees. The angle of54.7 degrees can be achieved by using a single-crystal silicon waferwith a face plane <100> and an edge plane of <110>. The angle of 35.3degrees can be achieved by using a single-crystal silicon wafer with aface plane <110> and an edge plane of <100>. The sloping of the slopedsurfaces of the first and the second fin structures 29A, 29B is designedso that the sloped surfaces can hold the collimating device 28 in properposition for maintaining an optical working distance so that thecollimating device 28 collimates the laser beam 5.

FIG. 15 illustrates a diode laser package 1500 according to onenon-limiting illustrated embodiment. The package 1500 includes theapparatus 300 and a mounting fixture 240. In other embodiments, insteadof the apparatus 300, the package 1500 may include any one of theapparatus 100, apparatus 200, apparatus 400, apparatus 500, apparatus600, apparatus 700, apparatus 800, apparatus 900, and apparatus 1000.The apparatus 300 is mounted on the mounting fixture 240, and thepackage 1500 can be further integrated into a system not illustrated.For example, the mounting fixture 240 may be a manifold with fluidchannels therein for a cooling fluid, such as water, to flow through themounting fixture 240 to provide cooling of the apparatus 300 or, morespecifically, cooling of the light emitter 1 in the apparatus 300. FIG.15 shows an integration of the collimating device 9 in a silicon-etcheddiode laser package that includes the silicon-based first and the secondfin structures 10A, 10B, the silicon-based support plate 4, and thelight emitter 1. The design of the first and the second fin structures10A, 10B and the support plate 4 provides great flexibility, simplicity,and repeatability in the integration of the collimating device 9 intothe apparatus 300. Thus, such novel design enables the mass productionof diode laser packages such as the package 1500 with a great degree ofprecision for a variety of laser applications.

FIG. 16 illustrates a multi-emitter apparatus 1100 according to onenon-limiting illustrated embodiment. The apparatus 1100 includes asupport plate 31 and a plurality of fin structures 10A, 10B, 10C, 10D,10E, 10F that are attached to the support plate 31. The apparatus 1100includes a plurality of light emitters, namely light emitters 1A, 1B,1C, 1D, 1E. In one embodiment, the light emitters 1A, 1B, 1C, 1D, 1E arediode lasers and each of which emits a respective laser beam 5 in adirection away from the support plate 31 when mounted in place as shownin FIG. 16. The light emitters 1A, 1B, 1C, 1D, 1E are respectivelyphysically coupled between the fin structures 10A, 10B, 10C, 10D, 10E,10F. In one embodiment, the apparatus 1100 also includes a mountingfixture 260, to which the support plate 31 is physically coupled orotherwise attached to as shown in FIG. 16. The mounting fixture 260 maybe a manifold with fluid channels therein for a cooling fluid, such aswater, to flow through the mounting fixture 260 to provide cooling ofthe apparatus 1100 or, more specifically, cooling of the light emitters1A, 1B, 1C, 1D, 1E in the apparatus 1100. The apparatus 1100 alsoincludes a plurality of collimating devices 9A, 9B, 9C, 9D, 9E. Each ofthe collimating devices 9A, 9B, 9C, 9D, 9E may be a rod lens and isprecisely placed so that the laser beam 5 propagates through the centerof the rod lens. Although a number of five light emitters are shown inFIG. 16, in other embodiments the number of light emitters, finstructures, and collimating devices vary, and the size of the supportplate 31 can vary accordingly to accommodate the desired number of lightemitters. The use of silicon etched structure such as the fin structures10A, 10B, 10C, 10D, 10E, 10F and the support plate 31 allow simple,repeatable, and precise assembly of the apparatus 1100. The precisioncollimation and compact packaging can increase the radiance of the diodelasers as well as improve the manufacturability and performance whileenabling mass production.

Thus, embodiments of the present disclosure include design schemes for asilicon-based micro-machined lens mounting structure that uses kinematicalignment of a collimating lens such as a rod lens or a high numericalaperture lens. Several alignment schemes are developed to align thecollimating lens in a silicon-based support structure, and thecollimating lens is placed in the support structure to align thecollimating lens to within a few microns of tolerance. The supportstructure is constructed by bonding two pieces of silicon etchedstructures to a silicon-based support plate. This support structurepermits control of the tolerance error in the silicon micro-etching andthe collimating lens specification. Also, other mounting features aremicro-etched on the slope of the fin structures for registering thecollimating lens to align the collimating lens kinematically. Thisprocess allows controlling the mechanical tolerance of the fabricatedsilicon-based structure to securely position the collimating lens forthe UV-curing epoxy or soldering process.

Another advantage of the inventive concept disclosed herein is that itallows one to easily assemble the collimating lens due to a novel designof the kinematic alignment structure. The collimating lens can be placedin an assembly fixture to allow for passively alignment of the diodelaser for perfect collimation of the diode laser beam. Two silicon-basedfin structures are etched to fabricate a monolithic structure as themounting structure for a diode laser and a collimating lens. Thestructures include a vertical or sloped wall that comes naturally fromthe anisotropic etching process of a <100> or <110> single-crystalsilicon wafer. The <100> plane of a single-crystal silicon waferproduces a 54.7-degree angle with the <111> plane of a single-crystalsilicon wafer in a face plane of the <100> single-crystal silicon wafer.The <110> plane of the single-crystal silicon wafer can be etched toresult in a 35.5-degree angle with the <111> plane of the single-crystalsilicon wafer in a face plane of <110> single-crystal silicon wafer.These sloped walls are bonded together to make a groove for thecollimating lens. Then, the collimating lens can be dropped in a groovedchannel for kinematically aligning the collimating lens. The lens can beactively aligned while the lens is in the groove by using an alignmenttool. Since the support structure has kinematic functionality, the lenscan be securely positioned for better performance over many thermalcycles of the epoxy or solder bonding.

Due to the monolithic design of the collimating lens mounting, thedesign of diode laser package is simple and easy to assemble. Most ofthe current collimation schemes use a separate lens mounting structureto attach the collimating lens, and then the lens mounting structure ismounted on the diode laser package. In this case, perfect alignment ofall diode lasers is not feasible and strong radiance is impaired bymisalignment of the multi-diode laser stack. To improve the radiance ofthe multi-diode laser stack, another mounting scheme was developed toalign all diode lasers individually for a perfect alignment. However,this alignment process becomes cumbersome in the manufacturing processwhen the quantity of diode lasers in the multi-diode stack package growsto 10 stacks or more. It is believed that the inventive concept discloseherein addresses the problems associated with previous alignmenttechniques and improves the brightness of the diode laser package.

The above description of illustrated embodiments, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe embodiments to the precise forms disclosed. Although specificembodiments of and examples are described herein for illustrativepurposes, various equivalent modifications can be made without departingfrom the spirit and scope of the disclosure, as will be recognized bythose skilled in the relevant art. The teachings provided herein of thevarious embodiments can be applied to other context, not necessarily theexemplary context of silicon-based support structure for diode lasersgenerally described above.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

1. An apparatus, comprising: a silicon-based support member having areceiving surface; and a silicon-based alignment structure received onthe receiving surface of the support member, the alignment structurehaving a first surface and a second surface parallel to and facing thefirst surface with a gap defined therebetween and configured to receivea light-emitting device inside the gap with the first surface and thesecond surface in contact with the light-emitting device such that, whena collimating rod lens is disposed on the alignment structure and overthe gap, a longitudinal center line of the collimating rod lens is notaligned with a mid-point of the gap.
 2. The apparatus as recited inclaim 1, wherein the alignment structure includes a mounting end and adistal end opposite the mounting end, wherein the mounting end of thealignment structure is received on the receiving surface of the supportmember, and wherein the alignment structure comprises: a first finstructure having an upper portion and a lower portion with a firstsurface extending between the upper and lower portions as the firstsurface of the alignment structure, the upper portion of the first finstructure including a second surface that is sloped and contiguous withrespect to the first surface of the first fin structure and that isconfigured to receive at least a portion of a collimating rod lens alonga longitudinal length of the second surface of the first fin structure;and a second fin structure having an upper portion and a lower portionwith a first surface extending between the upper and lower portions ofthe second fin structure as the second surface of the alignmentstructure, the upper portion of the second fin structure including asecond surface that is sloped and contiguous with respect to the firstsurface of the second fin structure and that is configured to receive atleast a portion of the collimating rod lens along a longitudinal lengthof the second surface of the second fin structure, wherein: the lowerportion of the first fin structure and the lower portion of the secondfin structure form the mounting end of the alignment structure; theupper portion of the first fin structure and the upper portion of thesecond fin structure form the distal end of the alignment structure; andthe receiving surface of the support member receives at least a part ofthe lower portion of the first fin structure and at least a part of thelower portion of the second fin structure, the first fin structure andthe second fin structure extending outward from the receiving surface ofthe support member and arranged with the respective first surfaces ofthe first fin structure and the second fin structure facing each other,approximately parallel, to define the gap between the respective firstsurfaces of the first fin structure and the second fin structure.
 3. Theapparatus as recited in claim 2, wherein, when the lower portion of thefirst fin structure and the lower portion of the second fin structureare received by the receiving surface of the support member, a distancefrom the receiving surface to the second surface of the first finstructure is different from a distance from the receiving surface to thesecond surface of the second fin structure.
 4. The apparatus as recitedin claim 2, wherein the receiving surface of the support member includesat least one V-notch groove, and wherein the at least one V-notch grooveinterlockingly receives the lower portion of the first fin structure orthe lower portion of the second fin structure.
 5. The apparatus asrecited in claim 2, wherein at least one of the first fin structure, thesecond fin structure, and the support base substantially comprises achemically etchable material.
 6. The apparatus as recited in claim 5,wherein the chemically etchable material is one of silicon material, asingle-crystal silicon wafer, a multi-crystal silicon wafer and aceramic material.
 7. The apparatus as recited in claim 2, wherein atleast one of the first fin structure, the second fin structure, and thesupport base is metalized.
 8. The apparatus as recited in claim 2,wherein the second surface of the upper portion of the first finstructure is sloped 35.3 degrees with respect to a plane defined by thefirst surface of the first fin structure.
 9. The apparatus as recited inclaim 2, wherein the second surface of the upper portion of the secondfin structure is sloped 35.3 degrees with respect to a plane defined bythe first surface of the second fin structure.
 10. The apparatus asrecited in claim 1, further comprising: a light emitter having anemitting side, the light emitter disposed in the gap between the firstsurface and the second surface of the alignment structure with theemitting side adjacent to and in contact with the first surface or thesecond surface of the alignment structure.
 11. The apparatus as recitedin claim 10, wherein, when the collimating rod lens is disposed on thealignment structure and over the gap, the longitudinal center line ofthe collimating lens is approximately aligned with the emitting side ofthe light emitter.
 12. An apparatus, comprising: a silicon-based firstfin structure having an upper portion and a lower portion with a firstsurface extending between the upper and lower portions, the upperportion of the first fin structure including a second surface that issloped and contiguous with respect to the first surface; a silicon-basedsecond fin structure having an upper portion and a lower portion with afirst surface extending between the upper and lower portions of thesecond fin structure, the upper portion of the second fin structureincluding a second surface that is sloped and contiguous with respect tothe first surface of the second fin structure; and a silicon-basedsupport member having a receiving surface that receives at least a partof the lower portion of the first fin structure and at least a part ofthe lower portion of the second fin structure such that the first finstructure and the second fin structure extend outward from the receivingsurface of the support member with the respective first surfaces of thefirst fin structure and the second fin structure facing each other whenthe first and second fin structures are received by the support member,wherein the receiving surface of the support member includes a firstV-notch groove and a second V-notch groove, and wherein the firstV-notch groove interlockingly receives the lower portion of the firstfin structure and the second V-notch groove interlockingly receives thelower portion of the second fin structure.
 13. The apparatus as recitedin claim 12, wherein when the first fin structure and the second finstructure are received on the support member: the first fin structureand the second fin structure define a gap therebetween; and the secondsurface of the first fin structure and the second surface of the secondfin structure have different heights relative to the receiving surfaceof the support member such that, when a collimating rod lens is disposedon the second surface of the first fin structure and the second surfaceof the second fin structure, a longitudinal center line of thecollimating rod lens is not aligned with a mid-point of the gap.
 14. Theapparatus as recited in claim 12, wherein at least one of the first finstructure, the second fin structure and the support base substantiallycomprises a chemically etchable material.
 15. The apparatus as recitedin claim 14, wherein the chemically etchable material is one of siliconmaterial, a single-crystal silicon wafer, a multi-crystal silicon waferand a ceramic material.
 16. The apparatus as recited in claim 12,wherein at least one of the first fin structure, the second finstructure and the support base is metalized.
 17. The apparatus asrecited in claim 12, wherein the second surface of the upper portion ofthe first fin structure is sloped 35.3 degrees with respect to a planedefined by the first surface of the first fin structure.
 18. Theapparatus as recited in claim 12, wherein the second surface of theupper portion of the second fin structure is sloped 35.3 degrees withrespect to a plane defined by the first surface of the second finstructure.
 19. The apparatus as recited in claim 12, further comprising:an adhesive material interposing at least one of the first and thesecond fin structures and the support member, the adhesive materialattaching the at least one of the first and the second fin structures tothe support member by metal soldering, epoxy boding, eutectic bonding,anodic bonding, diffusion bonding, or a combination thereof.
 20. Theapparatus as recited in claim 12, further comprising: a firstedge-emitting light emitter coupled between the first fin structure andthe second fin structure; and a first collimating rod lens having alongitudinal center line and being disposed on the second surface of theupper portion of the first fin structure and the second surface of theupper portion of the second fin structure.